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Daisuke Kosemura

Japan Society for the Promotion of Science

10

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60

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Correlation between temperature dependence of Raman shifts and in-plane strains in an AlGaN/GaN stack

2017 Journal of Applied Physics
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Edge trimming for wafer-to-wafer 3D integration

2016
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Stress measurements in semiconductor devices using nano-focused Raman spectroscopy

2016
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Invited) Mobility Enhancement of Uniaxially Strained Germanium Nanowire MOSFETs

2014
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Invited) Anisotropoic Strain Evaluation in the Finite Si Area by Surface Plasmon Enhanced Raman Spectroscopy

2014
- Atsushi Ogura
- Daisuke Kosemura
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Citations (1)
Stress Measurements in Si and SiGe by Liquid-Immersion Raman Spectroscopy

2012
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Channel strain analysis in high-performance damascene-gate p-metal-oxide-semiconductor field effect transistors using high-spatial resolution Raman spectroscopy

2010 Journal of Applied Physics
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Citations (22)
Cross-Sectional UV-Raman Measurement for Obtaining Two-Dimensional Channel Stress Profile in Extremely High-Performance pMOSFETs

2010
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Transverse-optical phonons excited in Si using a high-numerical-aperture lens

2010 Applied Physics Letters
- Daisuke Kosemura
- Atsushi Ogura
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Citations (27)
Transconductance Enhancement of Strained and Si Nanowire Channel Field-Effect Transistors

2008
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