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T. Iwamatsu
T. Iwamatsu
Mitsubishi Electric
Optoelectronics
MOSFET
Electric field
Condensed matter physics
Doping
4
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4
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Gate Oxide Instability and Lifetime in SiC MOSFETs under a Wide Range of Positive Electric Field Stress
2020
IEDM | International Electron Devices Meeting
Munetaka Noguchi
A. Koyama
T. Iwamatsu
Hiroyuki Amishiro
Hiroshi Watanabe
Naruhisa Miura
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Improvement in the Channel Performance and NBTI of SiC-MOSFETs by Oxygen Doping
2019
IEDM | International Electron Devices Meeting
Munetaka Noguchi
T. Iwamatsu
Hiroyuki Amishiro
Hiroshi Watanabe
Koji Kita
Naruhisa Miura
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Invited: Limiting factors of inversion layer mobility in Si-face 4H-SiC MOSFETs
2019
IMFEDK | International Meeting for Future of Electron Devices, Kansai
Munetaka Noguchi
T. Iwamatsu
Hiroyuki Amishiro
Hiroshi Watanabe
Naruhisa Miura
Koji Kita
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Demonstration of SiC-MOSFET embedding Schottky barrier diode for inactivation of parasitic body diode
2016
Shiro Hino
Hatta Hideyuki
Koji Sadamatsu
Y. Nagahisa
Shigehisa Yamamoto
T. Iwamatsu
Yasuki Yamamoto
Masayuki Imaizumi
Shuhei Nakata
Satoshi Yamakawa
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