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T. Tanigawa

Tohoku University

6

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Novel Quad-Interface MTJ Technology and Its First Demonstration With High Thermal Stability Factor and Switching Efficiency for STT-MRAM Beyond 2X nm

2020 IEEE Transactions on Electron Devices
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Dual-Port Field-Free SOT-MRAM Achieving 90-MHz Read and 60-MHz Write Operations under 55-nm CMOS Technology and 1.2-V Supply Voltage

2020 VLSIC | Symposium on VLSI Circuits
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Scalability of Quad Interface p-MTJ for 1X nm STT-MRAM with 10 ns Low Power Write Operation, 10 years Retention and Endurance $> 10^{11}$

2020 VLSIT | Symposium on VLSI Technology
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First demonstration of field-free SOT-MRAM with 0.35 ns write speed and 70 thermal stability under 400°C thermal tolerance by canted SOT structure and its advanced patterning/SOT channel technology

2019 IEDM | International Electron Devices Meeting
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A 47.14-μW 200-MHz MOS/MTJ-Hybrid Nonvolatile Microcontroller Unit Embedding STT-MRAM and FPGA for IoT Applications

2019 IEEE Journal of Solid-state Circuits
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