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Jason Heidecker

California Institute of Technology

4

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Qualification of 128 Gb MLC NAND Flash for SMAP space mission

2010 IIRW | International Integrated Reliability Workshop
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Single Event Latchup (SEL) and Total Ionizing Dose (TID) of a 1 Mbit Magnetoresistive Random Access Memory (MRAM)

2010 REDW | Radiation Effects Data Workshop
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Impact of device scaling on deep sub-micron transistor reliability - a study of reliability trends using SRAM

2005 IIRW | International Integrated Reliability Workshop
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