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Taeh Wan Kim
Taeh Wan Kim
SK Hynix
Analytical chemistry
Transition metal
Oxide
Random access
random access memory
4
Papers
31
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Publisher’s Note: Dependence of the Switching Characteristics of Resistance Random Access Memory on the Type of Transition Metal Oxide: TiO2, ZrO2, and HfO2 [J. Electrochem. Soc., 158, H417 (2011)]
2011
Journal of The Electrochemical Society
Wan Gee Kim
Min Gyu Sung
Sook-Joo Kim
Jong Hee Yoo
Te One Youn
Jang Won Oh
Jung Nam Kim
Byung Gu Gyun
Taeh Wan Kim
Chi Ho Kim
Jun Young Byun
Won Kim
Moon-Sig Joo
Jae Sung Roh
Sung Ki Park
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Citations (2)
The effect of crystallinity of HfO 2 on the resistive memory switching reliability
2011
IRPS | International Reliability Physics Symposium
Min Gyu Sung
Wan Gee Kim
Jong Hee Yoo
Sook-Joo Kim
Jung Nam Kim
Byung Gu Gyun
Jun Young Byun
Taeh Wan Kim
Won Kim
Moon-Sig Joo
Jae Sung Roh
Sung Ki Park
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Citations (2)
Dependence of the switching characteristics of resistance random access memory on the type of transition metal oxide
2010
ESSDERC | European Solid-State Device Research Conference
Wan Gee Kim
Min Gyu Sung
Sook-Joo Kim
Ja-Yong Kim
Jiwon Moon
Sung Joon Yoon
Jung Nam Kim
Byung Gu Gyun
Taeh Wan Kim
Chi Ho Kim
Jun Young Byun
Won Kim
Te One Youn
Jong Hee Yoo
Jang Won Oh
Ho Joung Kim
Moon-Sig Joo
Jae Sung Roh
Sung Ki Park
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Citations (19)
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