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Yawen Zhao

Sun Yat-sen University

3

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A balancing method for low R on and high V th normally-off GaN MISFET by preserving a damage-free thin AlGaN barrier layer

2018 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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High-Mobility Normally OFF Al 2 O 3 /AlGaN/GaN MISFET With Damage-Free Recessed-Gate Structure

2018 IEEE Electron Device Letters
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Ultra-High Field-Effect Mobility Thin-Film Transistors With Metal–Organic Chemical Vapor Deposition Grown In 2 O 3 Channel Treated by Oxygen Microwave Plasma

2015 IEEE Electron Device Letters
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Citations (11)