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N.X. Nguyen

University of California, Santa Barbara

9

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47

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Current transport in band-gap engineered AlInAs/GaInAs/InP double heterojunction bipolar transistor using chirped superlattice

1995 ACHSSDC | IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
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High-breakdown AlGaAs/InGaAs/GaAs PHEMT with tellurium doping

1995 Electronics Letters
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Low temperature grown AlGaAs passivation in GaAs power MESFET

1995 ACHSSDC | IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits
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TELLURIUM-DOPED AL0.43GA0.57AS/(IN0.2)GAAS MODULATION DOPED HETEROSTRUCTURES BY MOLECULAR-BEAM-EPITAXY

1995 Applied Physics Letters
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Temperature investigation of the gate-drain diode of power GaAs MESFET with low-temperature-grown (Al)GaAs passivation

1993 Journal of Electronic Materials
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