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Boram Yi
Boram Yi
Korea University
Bipolar junction transistor
Physics
Electronic engineering
Optoelectronics
Logic gate
5
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6
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0
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Surface-Potential-Based Analytical Model of Low-Frequency Noise for Planar-Type Tunnel Field-Effect Transistors
2021
IEEE Transactions on Electron Devices
Yeong-Hun Park
Boram Yi
Seung Hwan Kim
Ju-Hyun Shim
Hyeong-Sub Song
Hyun dong Song
Hyun-Jin Shin
Hi-Deok Lee
Ji-Woon Yang
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Citations (1)
Physics-Based Compact Model of Transient Leakage Current Caused by Parasitic Bipolar Junction Transistor in Gate-All-Around MOSFETs
2020
Solid-state Electronics
Boram Yi
Yeong-Hun Park
Ji-Woon Yang
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Physics-Based Compact Model of Parasitic Bipolar Transistor for Single-Event Transients in FinFETs
2018
IEEE Transactions on Nuclear Science
Boram Yi
Boung Jun Lee
Jin-Hwan Oh
Jiseon Kim
Jun Hyeok Kim
Ji-Woon Yang
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Analytical Model of the Parasitic Bipolar Junction Transistor in Low-Doped Double-Gate FinFETs for Pass-Gate Circuits
2016
IEEE Transactions on Electron Devices
Boram Yi
Chang-Yong Lee
Jin-Hwan Oh
Boung Jun Lee
Sungkyu Seo
Ji-Woon Yang
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Compact Model of BJT enhanced Tunnel Field Effect Transistor
2016
Boram Yi
Boung Jun Lee
Ji-Woon Yang
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