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Hongchang Kim
Hongchang Kim
Resistive random-access memory
Optoelectronics
Materials science
Oxide
Metal
2
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Electrical characteristic comparison of RRAM device according to the type of metal oxide
2019
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Hongchang Kim
SukYeop Chun
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GaYeong Lee
Jaehun Jeong
YeongSoo Ha
Jinwoo Park
Junehee Park
Doojae Park
Moongyu Jang
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The Characteristics of RRAM Devices Manufactured Using Tantalum Oxide and Titanium Oxide
2019
Gayoung Lee
Jaehun Jeong
SukYeop Chun
Hongchang Kim
JunHee Park
Jae-Hyeon Ko
Moongyu Jang
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