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Tatsufumi Isogai
Tatsufumi Isogai
Tohoku University
Inorganic chemistry
Dielectric
Radical
Plasma
Physical vapor deposition
2
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2
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0
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LOW VOLTAGE 3 V OPERATION OF FERROELECTRIC MULTI-LAYER STACK MFIS STRUCTURE DEVICE FORMED BY PLASMA PHYSICAL VAPOR DEPOSITION AND OXYGEN RADICAL TREATMENT
2006
Integrated Ferroelectrics
Ichirou Takahashi
Hiroyuki Sakurai
Tatsufumi Isogai
Akinobu Teramoto
Shigetoshi Sugawa
Tadahiro Ohmi
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MFIS Structure Device with a Low Dielectric Constant Ferroelectric Sr2(Ta1−x,Nbx)2O7 Formed by Plasma Physical Vapor Deposition and Oxygen Radical Treatment
2004
Integrated Ferroelectrics
Ichirou Takahashi
Hiroyuki Sakurai
Tatsufumi Isogai
Kiyoshi Funaiwa
Masaki Hirayama
Akinobu Teramoto
Shigetoshi Sugawa
Tadahiro Ohmi
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