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S. Boguth
S. Boguth
Vienna University of Technology
Electronic engineering
Electrical engineering
Engineering
Amplifier
Silicon
4
Papers
26
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Silicon-based RF ICs up to 100 GHz: research trends and applications
2004
SSICT | International Conference on Solid-State and Integrated Circuits Technology
W. Simburger
Klaus Aufinger
Josef Böck
S. Boguth
Daniel Kehrer
Christoph Kienmayer
H. Knapp
Thomas Meister
W. Perndl
M. Rest
H. Schafer
R. Schreiter
Reinhard Stengl
R. Thuringer
Marc Tiebout
Hans-Dieter Wohlmuth
Martin Wurzer
Al. Scholtz
Christoph Sandner
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High-speed SiGe HBT technology and applications to mm-wave circuits
2004
SiRF | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
Thomas Meister
H. Knapp
H. Schafer
Klaus Aufinger
Reinhard Stengl
S. Boguth
R. Schreiter
Mirjana Rest
W. Perndl
Martin Wurzer
T. Bottner
Josef Böck
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Citations (8)
Benefits of SiGe over silicon bipolar technology for broadband mixers with bandwidth above 10 GHz
2001
IMS | International Microwave Symposium
S. Hackl
M. Wurzer
J. Bock
T.F. Meister
H. Knapp
K. Aufinger
S. Boguth
L. Treitinger
Arpad L. Scholtz
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Citations (9)
A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology
2001
W. Simburger
W. Bakalski
Daniel Kehrer
Hans-Dieter Wohlmuth
M. Rest
Klaus Aufinger
S. Boguth
Arpad L. Scholtz
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Citations (2)
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