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W. Y. Teng
W. Y. Teng
United Microelectronics Corporation
CMOS
Electronic engineering
MOSFET
Silicon carbide
Engineering
2
Papers
1
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0
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A new and simple experimental approach to characterizing the carrier transport and reliability of strained CMOS devices in the quasi-ballistic regime
2009
IEDM | International Electron Devices Meeting
E. R. Hsieh
Steve S. Chung
P. W. Liu
W. T. Chiang
C. H. Tsai
W. Y. Teng
C. I. Li
T. F. Kuo
Y. R. Wang
C.L. Yang
C. T. Tsai
G. H. Ma
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Design of high-performance and highly reliable nMOSFETs with embedded Si:C S/D extension stressor(Si:C S/D-E)
2006
VLSIT | Symposium on VLSI Technology
Steve S. Chung
E. R. Hsieh
P. W. Liu
W. T. Chiang
S. H. Tsai
T. L. Tsai
R. M. Huang
C. H. Tsai
W. Y. Teng
C. I. Li
T. F. Kuo
Y. R. Wang
C.L. Yang
C. T. Tsai
G. H. Ma
S. C. Chien
S. W. Sun
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