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D. Szmyd
D. Szmyd
NXP Semiconductors
Electronic engineering
Electrical engineering
BiCMOS
Physics
Engineering
5
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96
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NPN yield improvement with ozone surface treatment prior to emitter poly deposition
2003
ASMC | Advanced Semiconductor Manufacturing Conference
Thuy Tran-Quinn
N. Bell
R. Cook
M.S. Fung
J.W. Andrews
D. Hilscher
D. Szmyd
V. Saikuma
R. Ketcheson
P. Kellawon
S. Calvelli
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QUBiC4G: a f/sub T//f/sub max/ = 70/100 GHz 0.25 /spl mu/m low power SiGe-BiCMOS production technology with high quality passives for 12.5 Gb/s optical networking and emerging wireless applications up to 20 GHz
2002
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
P. Deixler
R. Colclaser
D. Bower
N. Bell
W.B. de Boer
D. Szmyd
Serge Bardy
W. Wilbanks
P. Barre
M. v Houdt
J.C.J. Paasschens
Hugo Veenstra
E. v.d. Heijden
J.J.T.M. Donkers
J W Slotboom
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QUBiC4: a silicon RF-BiCMOS technology for wireless communication ICs
2001
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
D. Szmyd
R Brock
N. Bell
S. Harker
G. Patrizi
J Fraser
R. Dondero
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Citations (28)
An S-parameter technique for substrate resistance characterization of RF bipolar transistors
2000
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
S.D. Harker
R.J. Havens
J.C.J. Paasschens
D. Szmyd
L.F. Tiemeijer
E.F. Weagel
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Citations (6)
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