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Georgii N. Talalakin
Georgii N. Talalakin
Optoelectronics
Materials science
Heterojunction
Laser
Photoluminescence
4
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InGaAsSb(Gd)/InAsSbP double heterostructure lasers /spl lambda/=3.0-3.3 /spl mu/m for diode laser spectroscopy
2000
CLEO | Conference on Lasers and Electro-Optics
Nonna V. Zotova
M. Aidaraliev
T Beyer
S.A. Karandashov
B. A. Matveev
M. A. Remenny
N. M. Stus
Georgii N. Talalakin
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Optical sensors utilizing room temperature A3B5 leds
1997
Georgii N. Talalakin
Jouko Malinen
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InAsSbP-InAs-InAsSbP laser double-heterostructures with a p-n junction in the active region
1996
M. Aidaraliev
M. S. Bresler
Oleg B. Gusev
Nonna V. Zotova
S. A. Karandashev
B. A. Matveev
N. M. Stus
Georgii N. Talalakin
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Absorption edge of variable-gap epitaxial layers of InAs(1-x)Sb(x) (x less than or = 0.54)
1990
Nonna V. Zotova
A. V. Losev
B. A. Matveev
N. M. Stus
Georgii N. Talalakin
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