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K. Naydenov
K. Naydenov
University of Cambridge
Silicon carbide
MOSFET
Materials science
Semiconductor device modeling
Optoelectronics
3
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3
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The FinFET effect in Silicon Carbide MOSFETs
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
Florin Udrea
K. Naydenov
Hyemin Kang
T. Kato
E. Kagoshima
Tsuyoshi Nishiwaki
Hirokazu Fujiwara
Tsunenobu Kimoto
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Surge current capability evaluation of 6.5kV SiC MOSFETs with 3D cell layouts
2021
ISPSD | International Symposium on Power Semiconductor Devices and IC's
K. Naydenov
Nazareno Donato
Florin Udrea
Andrei Mihaila
G. Romano
S. Wirths
Lars Knoll
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An advanced physical model for the Coulombic scattering mobility in 4H-SiC inversion layers
2020
Journal of Applied Physics
K. Naydenov
N. Donato
Florin Udrea
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