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Heather Splawn
Heather Splawn
Materials science
Condensed matter physics
center
Electric field
Schottky diode
4
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5
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0
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High-k Oxide Field-Plated Vertical (001) β-Ga 2 O 3 Schottky Barrier Diode With Baliga’s Figure of Merit Over 1 GW/cm 2
2021
IEEE Electron Device Letters
Saurav Roy
Arkka Bhattacharyya
Praneeth Ranga
Heather Splawn
Jacob H. Leach
Sriram Krishnamoorthy
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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations
2021
Journal of Applied Physics
Malik Hassanaly
Hariswaran Sitaraman
Kevin L. Schulte
Aaron J. Ptak
John Simon
K. Udwary
Jacob H. Leach
Heather Splawn
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High Permittivity Dielectric Field-Plated Vertical (001) $\beta$-Ga$_2$O$_3$ Schottky Barrier Diode with Surface Breakdown Electric Field of 5.45 MV/cm and BFOM of $>$ 1 GW/cm$^{2}$
2021
arXiv: Materials Science
Saurav Roy
Arkka Bhattacharyya
Praneeth Ranga
Heather Splawn
Jacob H. Leach
Sriram Krishnamoorthy
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Surface chemistry models for GaAs epitaxial growth and hydride cracking using reacting flow simulations.
2021
arXiv: Applied Physics
Malik Hassanaly
Hariswaran Sitaraman
Kevin L. Schulte
Aaron J. Ptak
John Simon
K. Udwary
Jacob H. Leach
Heather Splawn
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