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James K. Schaeffer

Freescale Semiconductor

25

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684

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Factors impacting stabilization of tetragonal phase in Hf x Zr 1−x O 2 high-k dielectrics

2009 ICICDT | International Conference on IC Design and Technology
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Gate length scaling and high drive currents enabled for high performance SOI technology using high-κ/metal gate

2008 IEDM | International Electron Devices Meeting
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Improved Electrical Properties of ALD $\hbox{Hf}_{x} \hbox{Zr}_{1 - x}\hbox{O}_{2}$ Dielectrics Deposited on Ultrathin PVD Zr Underlayer

2008 IEEE Electron Device Letters
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On the positive channel threshold voltage of metal gate electrodes on high-permittivity gate dielectrics

2007 Journal of Applied Physics
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Oxidation of the Pt∕HfO2 interface: The role of the oxygen chemical potential

2007 Journal of Applied Physics
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Scaling of Hafnium-based High-k Dielectrics

2007 MRS Proceedings
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Application of group electronegativity concepts to the effective work functions of metal gate electrodes on high- κ gate oxides

2007 Microelectronic Engineering
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Citations (37)
Impact of Zr addition on properties of atomic layer deposited HfO2

2006 Applied Physics Letters
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Single Metal Gate on High-k Gate Stacks for 45nm Low Power CMOS

2006 IEDM | International Electron Devices Meeting
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Optimization of Hafnium Zirconate (HfZrOx) Gate Dielectric for Device Performance and Reliability

2006 The Japan Society of Applied Physics
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