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Martin Scott
Martin Scott
Hewlett-Packard
Crystallography
Doping
Dislocation
Chemistry
Single crystal
3
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97
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Limited Reaction Processing: Growth of Si-Ge/Si for Heterojunction Bipolar Transistor Applications
1989
The Japan Society of Applied Physics
Jim Gibbons
Judy L. Hoyt
Cliff King
Dave Noble
Chris M. Gronet
Martin Scott
Steve Laderman
Jeff Rosner
K. Nauka
J. E. Turner
Theodore I. Kamins
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Silicon and indium doping of GaAs: Measurements of the effect of doping on mechanical behavior and relation with dislocation formation
1987
Journal of Crystal Growth
E.D. Bourret
M.G. Tabache
J.W. Beeman
A. G. Elliot
Martin Scott
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Low dislocation density, large diameter, liquid encapsulated Czochralski growth of GaAs
1984
Journal of Crystal Growth
A.Grant Elliot
Chia-Li Wei
Ray Farraro
Geoffrey Woolhouse
Martin Scott
R. Hiskes
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Citations (60)
1