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S. Liang
S. Liang
Applied Materials
Electronic engineering
Optoelectronics
Perpendicular
Physics
Magnetoresistive random-access memory
2
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64
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Systematic validation of 2x nm diameter perpendicular MTJ arrays and MgO barrier for sub-10 nm embedded STT-MRAM with practically unlimited endurance
2016
IEDM | International Electron Devices Meeting
Jimmy Kan
Chando Park
C. Ching
Jaesoo Ahn
Lin Xue
Rongjun Wang
A. Kontos
S. Liang
Mangesh A. Bangar
Hao Chen
Sajjad Hassan
S. Kim
Mahendra Pakala
Seung H. Kang
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Citations (31)
Systematic optimization of 1 Gbit perpendicular magnetic tunnel junction arrays for 28 nm embedded STT-MRAM and beyond
2015
IEDM | International Electron Devices Meeting
Chando Park
Jimmy Kan
C. Ching
Jaesoo Ahn
Lin Xue
Rongjun Wang
A. Kontos
S. Liang
Mangesh A. Bangar
Hao Chen
Sajjad Hassan
Matthias Georg Gottwald
Xiaochun Zhu
Mahendra Pakala
Seung H. Kang
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Citations (33)
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