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Y. Ohshima
Y. Ohshima
Hosei University
Ion implantation
Fluence
Hall effect
Doping
Analytical chemistry
1
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Dual-energy Si ion implantation in epitaxial GaN layers on AlN/Al2O3
2007
Nuclear Instruments & Methods in Physics Research Section B-beam Interactions With Materials and Atoms
D. Ozaki
J. Ebihara
Y. Ohshima
R. Takeuchi
Taroh Inada
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