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S. Bin Dolmanan
S. Bin Dolmanan
Agency for Science, Technology and Research
Transistor
Analytical chemistry
Physics
Electron mobility
Photoluminescence
2
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34
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Electron velocity of 6 × 107 cm/s at 300 K in stress engineered InAlN/GaN nano-channel high-electron-mobility transistors
2015
Applied Physics Letters
S. Arulkumaran
Geok Ing Ng
C. M. Manoj Kumar
Kumud Ranjan
K. L. Teo
Omor Shoron
Siddharth Rajan
S. Bin Dolmanan
S. Tripathy
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Citations (14)
Investigation of the Device Degradation Mechanism in Pentacene-Based Thin-Film Transistors Using Low-Frequency-Noise Spectroscopy
2010
IEEE Transactions on Electron Devices
Lin Ke
S. Bin Dolmanan
Chellappan Vijila
S. J. Chua
Ye Hua Han
Ting Mei
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Citations (20)
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