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Vasif M. Mamedov

7

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Unsteady numerical simulations considering effects of thermal stress and heavy doping on the behavior of intrinsic point defects in large-diameter Si crystal growing by Czochralski method

2020 Journal of Crystal Growth
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Computer Simulation of Intrinsic Point Defect Behaviors Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

2018 The Japan Society of Applied Physics
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Computer Simulation of Intrinsic Point Defect Behaviours Valid for All Pulling Conditions in Large-diameter Czochralski Si Crystal Growth

2018
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(Invited) Computer Simulation of Intrinsic Point Defect Distribution Valid for All Pulling Conditions in Large-Diameter Czochralski Si Crystal Growth

2018
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Numerical Modeling of Stress and Dislocations in Si Ingots Grown by Seed-Directional Solidification and Comparison to Experimental Data

2014 Crystal Growth & Design
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