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Katsunori Asano

Kyoto University

88

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Development of fanless high efficiency 30 kVA SiC-UPS

2016 ICEMS | International Conference on Electrical Machines and Systems
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Growth and Characterization of Thick Multi-Layer 4H-SiC Epiwafer for Very High-Voltage p-Channel IGBTs

2015 Materials Science Forum
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Dynamic characteristics of large current capacity module using 16-kV ultrahigh voltage SiC flip-type n-channel IE-IGBT

2014 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Minimum gate trigger current degradation in 4.5 kV 4H-SiC commutated gate turn-off thyristor

2014 Japanese Journal of Applied Physics
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Progress in ultrahigh-voltage SiC devices for future power infrastructure

2014 IEDM | International Electron Devices Meeting
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Fabrication and Performance of 16-kV Ultrahigh-Voltage SiC Power Devices

2014
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High Voltage and Fast Switching Reverse Recovery Characteristics of 4H-SiC PiN Diode

2014 Materials Science Forum
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Static and dynamic performance evaluation of > 13 kV SiC p-channel IGBTs at high temperatures

2014 ISPSD | International Symposium on Power Semiconductor Devices and IC's
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Development of ultrahigh voltage SiC power devices

2014
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Cause of Forward Voltage Degradation for 4H-SiC PiN Diode with Additional Process

2014 MRS Proceedings
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