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Abhinav Kranti

Queen's University Belfast
University of Delhi

64

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1642

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Junctionless Nanowire Transistor (JNT): Properties and design guidelines

2011 Solid-state Electronics
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Nonclassical Channel Design in MOSFETs for Improving OTA Gain-Bandwidth Trade-Off

2010 SoCC | System-on-Chip Conference
- Abhinav Kranti
- G. Alastair Armstrong
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Junctionless 6T SRAM cell

2010 Electronics Letters
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Analysis of the Junctionless Transistor Architecture

2010 The Japan Society of Applied Physics
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Analog/RF performance of sub-100 nm SOI MOSFETs with non-classical gate-source/drain underlap channel design

2010 SiRF | Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems
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Nanowire zero-capacitor DRAM transistors with and without junctions

2010 IEEE-NANO | International Conference on Nanotechnology
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Junctionless nanowire transistor (JNT): Properties and design guidelines

2010 ESSDERC | European Solid-State Device Research Conference
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Underlap channel UTBB MOSFETs for low—power analog/RF applications

2009 ULIS | International Conference on Ultimate Integration on Silicon
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High temperature performance of OTA with non-ideal Double Gate SOI MOSFETs

2009 SOI | International SOI Conference
- Abhinav Kranti
- G. Alastair Armstrong
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Impact of gate―source/drain channel architecture on the performance of an operational transconductance amplifier (OTA)

2009 Semiconductor Science and Technology
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