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A. V. Nenashev

Russian Academy of Sciences
Novosibirsk State University

78

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519

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Formation of InAs/GaP Quantum-Well Heterostructures on Silicon Substrates by Molecular-Beam Epitaxy

2021 Semiconductors
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Electron Spin Resonance in Heterostructures with Ring Molecules of GeSi Quantum Dots

2021 Jetp Letters
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Luminescence of Spatially Ordered Self-Assembled Solitary Ge(Si) Nanoislands and their Groups Incorporated into Photonic Crystals

2020 Semiconductors
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Self-assembled epitaxial metal–semiconductor nanostructures with enhanced GeSi quantum dot luminescence

2020 Journal of Applied Physics
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Electron spatial localization tuned by strain in Ge/Si quantum dot heterostructures

2019 Physical Review B
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Percolation description of charge transport in amorphous oxide semiconductors

2019 arXiv: Disordered Systems and Neural Networks
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Field-enhanced mobility in the multiple-trapping regime

2018 Physical Review B
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ESR Study of Electron States in Ge/Si Heterostructures with Nanodisc Shaped Quantum Dots

2017 Zeitschrift für Physikalische Chemie
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Analytical theory for charge carrier recombination in blend organic solar cells

2017 Physical Review B
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Photoluminescence from Ordered Ge/Si Quantum Dot Groups Grown on the Strain‐Patterned Substrates

2017 Physica Status Solidi (c)
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