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T. Ootani
T. Ootani
Toshiba
Electronic engineering
CMOS
Static random-access memory
Voltage
Computer science
2
Papers
17
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Consideration of poly-Si loaded cell capacity limits for low-power and high-speed SRAMs
1992
IEEE Journal of Solid-state Circuits
H. Kato
Kazuyuki Sato
Masataka Matsui
H. Shibata
K. Hashimoto
T. Ootani
K. Ochii
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Citations (5)
A 4-Mb CMOS SRAM with a PMOS thin-film-transistor load cell
1990
IEEE Journal of Solid-state Circuits
T. Ootani
Shigeyuki Hayakawa
Masakazu Kakumu
A. Aona
M. Kinugawa
H. Takeuchi
K Noguchi
T. Yabe
Kazuyuki Sato
K. Maeguchi
Kiyofumi Ochii
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Citations (12)
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