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T. Finger
T. Finger
Otto-von-Guericke University Magdeburg
Epitaxy
Dislocation
Optoelectronics
Photoluminescence
Physics
3
Papers
264
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Fabry-Perot effects in InGaN∕GaN heterostructures on Si-substrate
2007
Journal of Applied Physics
C. Hums
T. Finger
T. Hempel
J. Christen
Armin Dadgar
A. Hoffmann
A. Krost
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Citations (61)
Metalorganic chemical vapor phase epitaxy of gallium-nitride on silicon
2003
Physica Status Solidi (c)
Armin Dadgar
A. Strittmatter
J. Bläsing
M. Poschenrieder
O. Contreras
Peter Veit
T. Riemann
F. Bertram
A. Reiher
A. Krtschil
A. Diez
T. Hempel
T. Finger
A. Kasic
Mathias Schubert
D. Bimberg
Fernando Ponce
J. Christen
A. Krost
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Citations (109)
Reduction of stress at the initial stages of GaN growth on Si(111)
2003
Applied Physics Letters
Armin Dadgar
M. Poschenrieder
A. Reiher
J. Bläsing
J. Christen
A. Krtschil
T. Finger
T. Hempel
A. Diez
A. Krost
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Citations (94)
1