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E. Bury
E. Bury
Katholieke Universiteit Leuven
Degradation (geology)
Analytical chemistry
Optoelectronics
Transistor
Electronic engineering
6
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19
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Bi-Modal Variability of nFinFET Characteristics During Hot-Carrier Stress: A Modeling Approach
2019
IEEE Electron Device Letters
Alexander Makarov
Ben Kaczer
Adrian Chasin
Michiel Vandemaele
E. Bury
M. Jech
A. Grill
Geert Hellings
Al-Moatasem El-Sayed
Tibor Grasser
Dimitri Linten
Stanislav Tyaginov
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Citations (4)
Full ($V_{\mathrm{g}},\ V_{\mathrm{d}}$) Bias Space Modeling of Hot-Carrier Degradation in Nanowire FETs
2019
IRPS | International Reliability Physics Symposium
Michiel Vandemaele
Ben Kaczer
Stanislav Tyaginov
Zlatan Stanojevic
Alexander Makarov
Adrian Chasin
E. Bury
Hans Mertens
Dimitri Linten
Guido Groeseneken
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Citations (9)
Array-Based Statistical Characterization of CMOS Degradation Modes and Modeling of the Time-Dependent Variability Induced by Different Stress Patterns in the $\{\boldsymbol{V_{G}}, \boldsymbol{V_{D}}\}$ bias space
2019
IRPS | International Reliability Physics Symposium
E. Bury
Adrian Chasin
Michiel Vandemaele
S. Van Beek
Jacopo Franco
Ben Kaczer
D. Linten
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