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Madhulika
Madhulika
PEC University of Technology
High-electron-mobility transistor
Optoelectronics
Materials science
algan gan
Nanoscopic scale
4
Papers
7
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Analytical Model to Evaluate Threshold Voltage of GaN Based HEMT Involving Nanoscale Material Parameters
2021
Superlattices and Microstructures
Madhulika
Amit Malik
Niyati Jain
Meena Mishra
Sunil Kumar
Dipendra Singh Rawal
Arun K. Singh
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Influence of barrier and spacer layer on structural and electrical properties of AlGaN/GaN HEMT
2019
International Journal of Information Technology
Madhulika
Neelu Jain
Sanjeev Kumar
Arun K. Singh
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Citations (2)
Nanoscale structural parameters based analytical model for GaN HEMTs
2019
Superlattices and Microstructures
Madhulika
Amit Malik
Neelu Jain
Meena Mishra
Shalendra Kumar
D. S. Rawal
Arun K. Singh
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Citations (4)
Modelling DC, RF and Noise Behavior of AlGaN/GaN HEMT on SiC Substrate
2017
PSD | International Workshop on Physics of Semiconductor Devices
Madhulika
Himanshu Pandey
Meenu Garg
Neelu Jain
Sanjeev Kumar
Amit Malik
D. S. Rawal
Meena Mishra
Arun K. Singh
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Citations (1)
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