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Xingyuan Gan

Chinese Academy of Sciences

8

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9

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Designing of 1 eV GaNAs/GaInAs superlattice subcell in current-matched four-junction solar cell*

2016 Journal of Semiconductors
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MBE growth of 1 eV GaNAs/InGaAs superlattice with various periods thicknesses and corresponding photovoltaic response

2015
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不同周期厚度的1 eV GaNAs/InGaAs超晶格太阳电池材料的MBE生长和器件特性

2015
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GaAs tunnel junction grown using tellurium and magnesium as dopants by solid-state molecular beam epitaxy

2014 Japanese Journal of Applied Physics
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Novel GaAs tunnel junction using tellurium and magnesium doping by solid-state molecular beam epitaxy

2014
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InGaN-based multiple quantum well photovoltaic cells with good open-circuit voltage and concentration behavior

2013 PVSC | Photovoltaic Specialists Conference
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