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Mike Astles
Mike Astles
University of St Andrews
Light-emitting diode
Nuclear magnetic resonance
Optoelectronics
Metalorganic vapour phase epitaxy
Threading (manufacturing)
2
Papers
60
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Efficiency measurement of GaN-based quantum well and light-emitting diode structures grown on silicon substrates
2011
Journal of Applied Physics
D. Zhu
C. McAleese
M. Häberlen
Carmen Salcianu
Ted Thrush
M. J. Kappers
Andrew Phillips
P.A. Lane
M.J. Kane
David J. Wallis
T. Martin
Mike Astles
Nicolas Hylton
P. Dawson
C. J. Humphreys
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Citations (43)
InGaN/GaN LEDs grown on Si(111): dependence of device performance on threading dislocation density and emission wavelength
2010
Physica Status Solidi (c)
D. Zhu
C. McAleese
M. Häberlen
Carmen Salcianu
Ted Thrush
M. J. Kappers
Andrew Phillips
P.A. Lane
M.J. Kane
David J. Wallis
T. Martin
Mike Astles
C. J. Humphreys
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Citations (17)
1