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S. Sbarma
S. Sbarma
Gate oxide
Channel length modulation
High-κ dielectric
Field-effect transistor
Leakage (electronics)
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Performance trade-offs by the use of high-K gate dielectrics in sub 100 nm channel length MOSFETs
2000
PSD | International Workshop on Physics of Semiconductor Devices
S. Sbarma
V. Ramgopal Rao
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