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Yung Hao Lin
Yung Hao Lin
National Chiao Tung University
Oxide
Electronic engineering
Gate oxide
Boron
PMOS logic
9
Papers
65
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Device Instability of ReRAM and a Novel Reference Cell Design for Wide Temperature Range Operation
2017
IEEE Electron Device Letters
Yung Hao Lin
Yu Yu-lin
Feng-Ming Lee
Y. H. Ho
K C Hsu
Ming-Hsiu Lee
Dai-Ying Lee
Kuang-Hao Chiang
C.C. Yang
C. H. Li
S.W. Wu
C Y Lei
C-M. Lin
C.-J. Chen
K H Chen
H.L. Lung
K. C. Wang
Tesung-Yuen Tseng
Chih-Yuan Lu
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Suppression of boron penetration in PMOS by using oxide gettering effect in poly-Si gate
1995
Japanese Journal of Applied Physics
Yung Hao Lin
Chung Len Lee
Tan Fu Lei
Tien-Sheng Chao
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Suppression of Boron Penetration in pMOS by Using Oxide Gettering Effect in Poly-Si Gate
1994
The Japan Society of Applied Physics
Yung Hao Lin
Tien-Sheng Chao
Chung Len Lee
Tan Fu Lei
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Citations (3)
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