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M. Rio Calvo

Centre national de la recherche scientifique

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Anti-phase boundaries annihilation in the growth of GaSb on Silicon(001)

2021
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Mid-IR lasers epitaxially grown on silicon

2019
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Molecular-beam epitaxy of GaSb on 6°-offcut (001) Si using a GaAs nucleation layer

2019 Journal of Crystal Growth
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Near- to mid- IR antimonide optoelectronic devices epitaxially integrated on on-axis (001) Si substrates

2019
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Molecular-beam epitaxy of GaSb on 6{\textdegree}-offcut (001) Si using a GaAs nucleation layer.

2019 arXiv: Materials Science
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