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M. E. Lin

University of Illinois at Urbana–Champaign

19

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3832

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Reactive ion etching of GaN using WI3

2001
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Observation of negative-differential-resistance in strained n-type Si/SiGe MODFETs

1994 Solid-state Electronics
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Citations (6)
Nonalloyed ohmic contacts on GaN using InN/GaN short‐period superlattices

1994 Applied Physics Letters
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Citations (58)
REACTIVE ION ETCHING OF GAN USING BCL3

1994 Applied Physics Letters
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Citations (198)
Photoluminescence of zinc‐blende GaN under hydrostatic pressure

1994 Applied Physics Letters
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Large‐band‐gap SiC, III‐V nitride, and II‐VI ZnSe‐based semiconductor device technologies

1994 Journal of Applied Physics
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Low temperature growth of single-crystalline cubic SiC on Si(111) by solid source molecular beam epitaxy

1993 Journal of Crystal Growth
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Thermal stability of GaN investigated by low-temperature photoluminescence spectroscopy

1993 Applied Physics Letters
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Citations (49)
GaN grown on hydrogen plasma cleaned 6H-SiC substrates

1993 Applied Physics Letters
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Si3N4/Si/n-GaAs capacitor with minimum interface density in the 1010 eV-1 cm-2 range

1993 Applied Physics Letters
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Citations (32)