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V. R. Deline

13

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247

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Microstructure and properties of dual ion beam sputtered tungsten film

1989 Journal of Vacuum Science and Technology
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A comparative study of SIMS depth profiling of boron in silicon

1984 Surface and Interface Analysis
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Analysis of Implanted Boron Profiles Across the Si-SiO 2 Interface by Secondary Ion Mass Spectrometry.

1983 MRS Proceedings
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Depth distributions and range parameters for He implanted in Si and GaAs

1982 Applied Physics Letters
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Secondary Ion Images of Impurities at Grain Boundaries in Polycrystalline Silicon

1981 MRS Proceedings
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Effects of Cr redistribution on electrical characteristics of ion-implanted semi-insulating GaAs

1980 IEEE Electron Device Letters
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Dopant concentration measurements in hydrogenated amorphous silicon films by glow discharge optical spectroscopy

1980 Solar Cells
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Glow discharge optical spectroscopy measurement of dopant concentrations in a-Si:H

1980 Journal of Non-crystalline Solids
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WP-A2 Effects of Cr redistribution on device characteristics in ion-implanted GaAs IC's fabricated with semi-insulating GaAs

1979 IEEE Transactions on Electron Devices
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Gettering of Cr in GaAs by back surface mechanical damage

1979 Physica Status Solidi (a)
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Citations (7)