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Mathilde Billaud
Mathilde Billaud
Centre national de la recherche scientifique
Materials science
Electronic engineering
Capacitor
Oxide
Analytical chemistry
4
Papers
9
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Electrical properties of metal/Al2O3/In0.53Ga0.47As capacitors grown on InP
2018
Journal of Applied Physics
Philippe Ferrandis
Mathilde Billaud
Julien Duvernay
M. Martin
A. Arnoult
Helen Grampeix
Mikael Casse
Hervé Boutry
Thierry Baron
Maud Vinet
Gilles Reimbold
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Citations (7)
MOCVD Epitaxy and Characterization of III-As and III-P Thin Layers on 300mm Silicon Substrate
2015
M. Martin
R. Cipro
Mathilde Billaud
J Moeyaert
F. Bassani
S Arnaud
S. David
V. Gorbenko
Jean-Paul Barnes
H. Boutry
Julien Duvernay
M. Casse
Y. Bogumilowicz
N. Rochas
Nicolas Chauvin
X. Bao
Z. Ye
J. B. Pin
Errol Antonio C. Sanchez
T. Baron
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HfO2/Al2O3/InGaAs MOSCAP Structures and InGaAs Plasma Nitridation Elaborated in a 300mm Pilot Line
2015
Mathilde Billaud
Julien Duvernay
H. Grampeix
B. Pelissier
M. Martin
Sylvain David
C. Vallée
Zdenek Chalupa
H. Boutry
Thierry Baron
Mickaël Cassé
Thomas Ernst
Maud Vinet
Gilles Reimbold
Oliver Faynot
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Citations (2)
Al 2 O 3 /InGaAs interface study on MOS capacitors for a 300mm process integration
2015
EUROSOI-ULIS | Joint International EUROSOI Workshop and International Conference on Ultimate Integration on Silicon
Mathilde Billaud
Julien Duvernay
H. Grampeix
B. Pelissier
M. Martin
T. Baron
H. Boutry
Zdenek Chalupa
M. Casse
Thomas Ernst
M. Vinet
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