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Hiroshi Katayama-Yoshida

Osaka University
Tohoku University
University of Tokyo

513

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13186

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A novel method for generating p-type wide- and ultrawide-bandgap III-nitride by doping with magnetic elements

2021 Applied Physics Express
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Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures.

2021 Nature Communications
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Exceptionally high saturation magnetisation in Eu-doped magnetite stabilised by spin–orbit interaction

2021 Physical Chemistry Chemical Physics
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First-principles calculations for high-temperature ferromagnetic semiconductor (In,Fe)Sb

2020 Bulletin of the American Physical Society
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High Curie temperature in Eu-doped GaN caused by Ga-vacancies

2020 Bulletin of the American Physical Society
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Heusler合金Co_2MnSiの有限温度電子構造と輸送特性の第一原理計算【JST・京大機械翻訳】

2020 Applied Physics Letters
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Hole-mediated ferromagnetism in a high-magnetic moment material, Gd-doped GaN.

2020 Journal of Physics: Condensed Matter
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Ferromagnetism and giant magnetoresistance in zinc-blende FeAs monolayers embedded in semiconductor structures

2020 arXiv: Materials Science
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High Curie temperature in Eu-doped GaN caused by volume-compensated Ga-vacancy

2020 AIP Advances
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Valence states and the magnetism of Eu ions in Eu-doped GaN

2020 Journal of Applied Physics
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