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Jarod C. Gagnon
Jarod C. Gagnon
Pennsylvania State University
Inorganic chemistry
Chemistry
Chemical vapor deposition
Crystallography
Microstructure
5
Papers
52
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Heteroepitaxial growth of GaN on vertical Si{110} sidewalls formed on trench-etched Si(001) substrates
2016
Journal of Crystal Growth
Jarod C. Gagnon
Haoting Shen
Yu Yuwen
Ke Wang
Theresa S. Mayer
Joan M. Redwing
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Citations (3)
The influence of buffer layer coalescence on stress evolution in GaN grown on ion implanted AlN/Si(111) substrates
2014
Journal of Crystal Growth
Jarod C. Gagnon
Jeffrey M. Leathersich
F. Shahedipour-Sandvik
Joan M. Redwing
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Citations (8)
In Situ Stress Measurements During GaN Growth on Ion-Implanted AlN/Si Substrates
2012
Journal of Electronic Materials
Jarod C. Gagnon
Mihir Tungare
Xiaojun Weng
Jeffrey M. Leathersich
F. Shahedipour-Sandvik
Joan M. Redwing
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Citations (5)
Hybrid Physical-Chemical Vapor Deposition of Bi$_{2}$Se$_{3}$ Thin films on Sapphire
2012
Bulletin of the American Physical Society
Joseph E. Brom
Yue Ke
Renzhong Du
Jarod C. Gagnon
Qi Li
Joan M. Redwing
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Structural and electrical properties of epitaxial Bi2Se3 thin films grown by hybrid physical-chemical vapor deposition
2012
Applied Physics Letters
Joseph E. Brom
Yue Ke
Renzhong Du
Dong-Jin Won
Xiaojun Weng
Kalissa Andre
Jarod C. Gagnon
Suzanne E. Mohney
Qi Li
Ke Chen
X. X. Xi
Joan M. Redwing
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Citations (36)
1