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C. R. Bolognesi

University of California, Santa Barbara

25

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565

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Length dependence of quantized conductance in ballistic constrictions fabricated on InAs/AlSb quantum wells.

1996 Physical Review B
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Energy-dependant cyclotron mass in InAs/AlSb quantum wells

1994 Semiconductor Science and Technology
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Citations (31)
Lateral potential modulation in InAs/AlSb quantum wells by wet etching

1994 Solid-state Electronics
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Citations (1)
Quantized conductance in an InAs/AlSb split-gate ballistic constriction with 1.0 microm channel length.

1994 Physical Review B
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VB-4 A Novel Quantum Effect FET with Resonantly Modulated Transfer Characteristics-Y. Ohno, * M.

1993 Device Research Conference
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Microwave performance of a digital alloy barrier Al(Sb,As)/AlSb/InAs heterostructure field-effect transistor

1993 IEEE Electron Device Letters
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Citations (37)
Improved charge control and the frequency performance in InAs/AlSb HFET's

1993 IEEE Transactions on Electron Devices
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Citations (2)
Growth of InAs-AlSb quantum wells having both high mobilities and high concentrations

1993 Journal of Electronic Materials
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Citations (65)
Intersubband transitions in InAs/AlSb quantum wells

1993 Materials Science and Engineering B-advanced Functional Solid-state Materials
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The effect of Landau quantization on cyclotron resonance in a non-parabolic quantum wells

1993 Semiconductor Science and Technology
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Citations (16)