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Dmitry V. Andreev

Bauman Moscow State Technical University

5

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37

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Modification of MIS structures by electron irradiation and high-field electron injection

2016 Journal of Surface Investigation-x-ray Synchrotron and Neutron Techniques
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Charge characteristics of MOS structure with thermal SiO2 films doped with phosphorus under high-field electron injection

2016 Inorganic Materials: Applied Research
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Modification of thin oxide films of MOS structure by high-field injection and irradiation

2016
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Modification and reduction of defects in thin gate dielectric of MIS devices by injection‐thermal and irradiation treatments

2015 Physica Status Solidi (c)
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Control current stress technique for the investigation of gate dielectrics of MIS devices

2015 Physica Status Solidi (c)
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Citations (14)