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C. Caramel
C. Caramel
Centre national de la recherche scientifique
Insulated-gate bipolar transistor
Electronic engineering
Electrical engineering
Power semiconductor device
Engineering
4
Papers
6
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The Bi-IGBT: a low losses power structure by IGBT parallel association
2008
Semiconductor Science and Technology
C. Caramel
R De Maglie
Patrick Austin
J.-L. Sanchez
J. Le Gal
Éric Imbernon
Jean-Pierre Laur
D. Flores
S. Hidalgo
J. Millan
J. Rebollo
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Citations (4)
3.3 kV IGBTs with an integrated anode voltage sensor
2008
C. Caramel
Patrick Austin
J.-L. Sanchez
Éric Imbernon
S. Hidalgo
D. Flores
J. Rebollo
J. Millan
J. Saiz
M. Mermet-Guyennet
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Simulation based analysis of a monolithically integrated fast and slow IGBT structure (U)
2007
EPE | European Conference on Power Electronics and Applications
J. Le Gal
R. De Maglie
C. Caramel
A. Bourennane
Patrick Austin
J.-L. Sanchez
Jean-Pierre Laur
D. Flores
J. Millán
J. Rebollo
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Short-circuit protection structure for insulated gate power devices
2004
BCTM | Bipolar/BiCMOS Circuits and Technology Meeting
C. Caramel
P. Austin
J.L Sánchez
Éric Imbernon
M. Breil
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Citations (2)
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