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J.L. Hall
J.L. Hall
University of Nottingham
Molecular beam epitaxy
Thin film
Plasma
Gallium nitride
Chemistry
5
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94
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Tuning perpendicular magnetic anisotropy in (Ga,Mn)(As,P) by thermal annealing
2010
Applied Physics Letters
A. Casiraghi
A. W. Rushforth
M. Wang
N. R. S. Farley
P. Wadley
J.L. Hall
C.R. Staddon
K. W. Edmonds
R. P. Campion
C. T. Foxon
B. L. Gallagher
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Citations (10)
Temperature effects during the growth of InxGa1−xN films through the whole compositional range by plasma-assisted molecular beam epitaxy
2010
Journal of Crystal Growth
J.L. Hall
A. J. Kent
C. T. Foxon
R. P. Campion
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Citations (5)
IBPOWER: Intermediate band materials and solar cells for photovoltaics with high efficiency and reduced cost
2009
PVSC | Photovoltaic Specialists Conference
A. Martí
E. Antolín
P.G. Linares
E. Cánovas
D. Fuertes Marrón
C. Tablero
Manuel J. Mendes
A. Mellor
I. Tobías
M.Y. Levy
E. Hernández
A. Luque
C.D. Farmer
C.R. Stanley
R. P. Campion
J.L. Hall
S. V. Novikov
C. T. Foxon
Roland Scheer
B. Marsen
H.W. Schock
M. Picault
C. Chaix
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Citations (7)
A complementary geometric model for the growth of GaN nanocolumns prepared by plasma-assisted molecular beam epitaxy
2009
Journal of Crystal Growth
C. T. Foxon
S. V. Novikov
J.L. Hall
R. P. Campion
D Cherns
Ian Griffiths
S Khongphetsak
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Citations (49)
Growth of ScN epitaxial films by plasma-assisted molecular beam epitaxy
2009
Journal of Crystal Growth
J.L. Hall
M. A. Moram
Ana M. Sanchez
S. V. Novikov
A. J. Kent
C. T. Foxon
C. J. Humphreys
R. P. Campion
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Citations (23)
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