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Guangxing Wan

South University of Science and Technology of China

6

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5

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RC Tightened Corner Test structure Design and Silicon Characterization in FinFET Technology

2020 SSICT | International Conference on Solid-State and Integrated Circuits Technology
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Charge pumping test technique using CMOS ring oscillator on leakage issue

2017 Microelectronics Journal
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Series resistance effect on time zero dielectrics breakdown characteristics of MOSCAP with ultra-thin EOT high-k/metal gate stacks*

2016 Journal of Semiconductors
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Overshoot Stress on Ultra-Thin HfO 2 High- $\kappa $ Layer and Its Impact on Lifetime Extraction

2015 IEEE Electron Device Letters
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On substrate dopant engineering for ET-SOI MOSFETs with UT-BOX

2014 Journal of Semiconductors
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