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Aivars J. Lelis

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Analytical Electron Microscopy of Antimony Doped 4H-SiC/SiO 2 and 4H-SiC/Boron and Phosphorus Doped SiO 2 Interface Structures in MOS Devices

2018
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Cause and Effect of Threshold-Voltage Instability on the Reliability of Silicon-Carbide MOSFETs

2011
- Aivars J. Lelis
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Relationship between 4H-SiC∕SiO2 transition layer thickness and mobility

2009 Applied Physics Letters
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