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Kazushi Nakazawa
Kazushi Nakazawa
Optoelectronics
Materials science
Electronic engineering
Power semiconductor device
Physics
5
Papers
102
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Present and future prospects of gan-based power electronics
2008
SSICT | International Conference on Solid-State and Integrated Circuits Technology
Daisuke Ueda
Masahiro Hikita
Satoshi Nakazawa
Kazushi Nakazawa
Hidetoshi Ishida
Manabu Yanagihara
Kaoru Inoue
Tetsuzo Ueda
Yasuhiro Uemoto
Tsuyoshi Tanaka
Takashi Egawa
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High Performance AlGaN/GaN HFETs for RF Applications
2006
Yutaka Hirose
Tomohiro Murata
Masahiro Hikita
Kazushi Nakazawa
Kaoru Inoue
Yasuhiro Uemoto
Tsuyoshi Tanaka
Daisuke Ueda
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Improvement of Breakdown Voltages in GaN Schottky Barrier Diodes by Pseudo-Superjunction Structures
2006
The Japan Society of Applied Physics
Kazushi Nakazawa
Hiroaki Ueno
Hisayoshi Matsuo
Manabu Yanagihara
Yasuhiro Uemoto
Tetsuzo Ueda
Tsuyoshi Tanaka
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AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
2005
IEEE Transactions on Electron Devices
Masahiro Hikita
Manabu Yanagihara
Kazushi Nakazawa
Hiroaki Ueno
Yutaka Hirose
Tetsuzo Ueda
Yasuhiro Uemoto
Tsuyoshi Tanaka
Daisuke Ueda
Takashi Egawa
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Citations (70)
350V/150A AlGaN/GaN power HFET on silicon substrate with source-via grounding (SVG) structure
2004
IEDM | International Electron Devices Meeting
Masahiro Hikita
Manabu Yanagihara
Kazushi Nakazawa
Hiroaki Ueno
Yutaka Hirose
Tetsuzo Ueda
Yasuhiro Uemoto
Tsuyoshi Tanaka
Daisuke Ueda
Takashi Egawa
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Citations (18)
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