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Ari N. Blumer
Ari N. Blumer
Ohio State University
Materials science
Dislocation
Optoelectronics
Metalorganic vapour phase epitaxy
Substrate (chemistry)
6
Papers
9
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EBSD of Rough Native CuInGaSe2 Thin-Films
2021
Microscopy and Microanalysis
Marzieh Baan
Ari N. Blumer
Tyler J. Grassman
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Correlation of early-stage growth process conditions with dislocation evolution in MOCVD-based GaP/Si heteroepitaxy
2021
Journal of Crystal Growth
Jacob T. Boyer
Ari N. Blumer
Zak H. Blumer
Daniel L. Lepkowski
Tyler J. Grassman
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Reduced dislocation introduction in III-V/Si heterostructures with glide-enhancing compressively-strained superlattices
2020
Crystal Growth & Design
Jacob T. Boyer
Ari N. Blumer
Zak H. Blumer
Daniel L. Lepkowski
Tyler J. Grassman
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InAs1-ySby virtual substrates grown by MOCVD for long wave infrared detectors
2020
Journal of Crystal Growth
Vinita Rogers
Julia I. Deitz
Ari N. Blumer
John A. Carlin
Tyler J. Grassman
Sanjay Krishna
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Development of Low-TDD GaAsyP1-y/GaP/Si Metamorphic Materials for High-Efficiency III-V/Si Photovoltaics
2020
PVSC | Photovoltaic Specialists Conference
Jacob T. Boyer
Ari N. Blumer
Zak H. Blumer
Francisco A. Rodríguez
Daniel L. Lepkowski
Steven A. Ringel
Tyler J. Grassman
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Si-matched BxGa1−xP grown via hybrid solid- and gas-source molecular beam epitaxy
2020
Applied Physics Letters
Zak H. Blumer
Jacob T. Boyer
Ari N. Blumer
Daniel L. Lepkowski
Tyler J. Grassman
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