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Francisco Pasadas
Francisco Pasadas
Field-effect transistor
Saturation velocity
Transistor
Radio frequency
Optoelectronics
5
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2
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Radio Frequency Performance Projection and Stability Tradeoff of h-BN Encapsulated Graphene Field-Effect Transistors
2019
IEEE Transactions on Electron Devices
P. C. Feijoo
Francisco Pasadas
José M. Iglesias
El Mokhtar Hamham
Raúl Rengel
David Jiménez
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Radio frequency performance projection and stability trade-off of h-BN encapsulated graphene field-effect transistors
2018
arXiv: Mesoscale and Nanoscale Physics
P. C. Feijoo
Francisco Pasadas
José Iglesias
El Mokhtar Hamham
Raúl Rengel
David Jiménez
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Modelling of field-effect transistors based on 2D materials targeting high-frequency applications
2017
arXiv: Mesoscale and Nanoscale Physics
Francisco Pasadas
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Scaling of graphene field-effect transistors supported on hexagonal boron nitride: radio-frequency stability as a limiting factor
2017
arXiv: Applied Physics
P. C. Feijoo
Francisco Pasadas
José Iglesias
María J. Martín
Raúl Rengel
Changfeng Li
Wonjae Kim
Juha Riikonen
Harri Lipsanen
David Jiménez
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Scaling of graphene field-effect transistors supported on hexagonal boron nitride: Radio-frequency stability as a limiting factor
2017
Nanotechnology
P. C. Feijoo
Francisco Pasadas
Jose M. Iglesias
María J. Martín
Raúl Rengel
Changfeng Li
Wonjae Kim
Juha Riikonen
Harri Lipsanen
David Jiménez
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Citations (2)
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