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P. Sivasubramani
P. Sivasubramani
Doping
Materials science
Condensed matter physics
Dipole
Dielectric
3
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Higher Permittivity RareEarth-Doped HfO2andZrO2Dielectrics for Logic andMemoryApplications
2007
International Symposium on VLSI Technology, Systems, and Applications
S Govindarajan
T. S. Bdsckea
P. D. Kirschb
M. A. Quevedo-Lopezc
P. Sivasubramani
S. C. Song
R. W. Wallaced
Y. Hung
S. Ramanathanf
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Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics
2007
Symposium on VLSI Technology
P. Sivasubramani
T.S. Böscke
Jeffrey Huang
Chadwin D. Young
Paul Kirsch
Siddarth Krishnan
Manuel Quevedo-Lopez
S. A. Govindarajan
B. S. Ju
H. R. Harris
Daniel J. Lichtenwalner
Jesse S. Jur
Angus I. Kingon
John Kim
Bruce E. Gnade
Robert M Wallace
Gennadi Bersuker
Byoung Hun Lee
Raj Jammy
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Dipole Moment Model Explaining nFET Vt Tuning Utilizing La, Sc, Er, and Sr Doped HfSiON Dielectrics
2007
Symposium on VLSI Technology
P. Sivasubramani
T.S. Böscke
Jeffrey Huang
Chadwin D. Young
Paul Kirsch
Siddarth Krishnan
Manuel Quevedo-Lopez
S. A. Govindarajan
B. S. Ju
H. R. Harris
Daniel J. Lichtenwalner
Jesse S. Jur
Angus I. Kingon
John Kim
Bruce E. Gnade
Robert M Wallace
Gennadi Bersuker
Byoung Hun Lee
Raj Jammy
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