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E. R. Buß
E. R. Buß
Braunschweig University of Technology
Metalorganic vapour phase epitaxy
Physics
Quantum well
Condensed matter physics
Crystal growth
4
Papers
26
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Non- and semipolar AlInN one-dimensionally lattice-matched to GaN for realization of relaxed buffer layers for strain engineering in optically active GaN-based devices
2016
Physica Status Solidi B-basic Solid State Physics
E. R. Buß
Philipp Horenburg
U. Rossow
H. Bremers
Tobias Meisch
Marian Caliebe
F. Scholz
A. Hangleiter
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Citations (5)
Indium incorporation processes investigated by pulsed and continuous growth of ultrathin InGaN quantum wells
2015
Journal of Crystal Growth
U. Rossow
L. Hoffmann
H. Bremers
E. R. Buß
Fedor Alexej Ketzer
Torsten Langer
A. Hangleiter
Thorsten Mehrtens
Marco Schowalter
A. Rosenauer
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Intentional anisotropic strain relaxation in ( 112¯2) oriented Al1−xInxN one-dimensionally lattice matched to GaN
2014
Applied Physics Letters
E. R. Buß
U. Rossow
H. Bremers
Tobias Meisch
Marian Caliebe
F. Scholz
A. Hangleiter
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Citations (4)
Lattice-matched AlInN in the initial stage of growth
2014
Applied Physics Letters
E. R. Buß
U. Rossow
H. Bremers
A. Hangleiter
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Citations (12)
1